c-band internally matched fet features ? high output power: p1db=46.5dbm(typ.) ? high gain: g1db=7.0db(typ.) ? high pae: add=32.5%(typ.) ? broad band: 7.7~8.5ghz ? impedance matched zin/zout = 50 ? ? hermetically sealed package absolute maximum ratings (case temperature tc=25 o c) electrical character istics (case temperature tc=25 o c) case style: ik 1 FLM7785-45F note : based on eiaj ed-4701 c-111a(c=100pf, r=1.5k ? ) item symbol rating unit drain-source voltage gate-source voltage total power dissipation storage temperature v ds v gs p t t stg 15 -5 115 -65 to +175 v v w o c channel temperature t ch 175 o c power gain at 1db g.c.p. limit item symbol test conditions unit drain current output power at 1db g.c.p. gain flatness i dss p 1db ? g a v db dbm min. typ. max. drain current i dsr s v a - 16 - -0.5 -1.5 -3.0 -5.0 - - 46.0 46.5 - 6.0 7.0 - -11 13 v ds =10v f=7.7 - 8.5 ghz i ds (dc)=8.0a(typ.) zs=z l =50 ? power-added efficiency add % - 32.5 - --1.6 - 24 - v ds =5v, v gs =0v transconductance g m v ds =5v, i ds =8.0a pinch-off voltage v p v ds =5v, i ds =960ma gate-source breakdown voltage v gso i gs =-960ua g 1db db thermal resistance r th channel to case - 1.1 1.3 o c/w channel temperature rise ? t ch 10v x ids(dc) x rth - - 100 o c description the FLM7785-45F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ? system. recommended operating comdition (case temperature tc=25 o c) item symbol condition unit dc input voltage forward gate current v ds i gf 10 52 v ma limit r g =10 ? reverse gate current i gr r g =10 ? -23.2 ma g.c.p.:gain compression point esd class iii 2000v ~ edition 1.3 september 2004
FLM7785-45F c-band internally matched fet 2 power derating curve 0 20 40 60 80 100 120 140 0 50 100 150 200 case temperature ( o c) total power dissipation (w) -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 26 28 30 32 34 36 38 40 output power (dbm) s.c.l : single carrier level imd(dbc) imd vs output power vds=10v, ids(dc)=8.0a f 1 =8.50ghz, f 2 =8.51ghz im3 im5 output power vs. frequency vds=10v,ids(dc)=8a 36 38 40 42 44 46 48 7.5 7.7 7.9 8.1 8.3 8.5 8.7 frequency (ghz) output power (dbm) pin=30dbm pin=34dbm pin=38dbm pin=40dbm p1db output power & p.a.e vs. input power 36 38 40 42 44 46 48 50 28 30 32 34 36 38 40 42 input power (dbm) output power (dbm) 0 20 40 60 80 100 120 140 vds=10v, ids(dc)=8.0a, f=8.1ghz power added efficiency (%) pout p.a.e
c-band internally matched fet FLM7785-45F vds=10v, ids(dc)=8.0a freq [ghz] mag ang mag ang mag ang mag ang 7.5 0.59 -92.42 2.42 37.25 0.05 87.74 0.55 -83.48 7.6 0.54 -115.60 2.50 18.21 0.05 55.84 0.50 -102.39 7.7 0.49 -132.70 2.53 3.25 0.06 31.40 0.47 -118.61 7.8 0.44 -150.94 2.55 -12.24 0.06 6.43 0.44 -136.88 7.9 0.36 -175.21 2.58 -34.31 0.07 -27.13 0.42 -161.09 8.0 0.31 166.47 2.59 -51.85 0.07 -52.27 0.42 -178.81 8.1 0.26 145.07 2.57 -73.91 0.08 -80.04 0.41 161.62 8.2 0.21 122.80 2.56 -99.42 0.08 -110.35 0.41 143.05 8.3 0.19 104.80 2.55 -121.60 0.08 -134.88 0.41 129.89 8.4 0.18 87.15 2.55 -143.52 0.08 -159.01 0.40 118.61 8.5 0.17 66.26 2.54 -168.78 0.09 171.71 0.39 106.72 8.6 0.16 47.84 2.55 169.26 0.09 145.16 0.38 96.08 8.7 0.15 30.74 2.55 149.06 0.09 121.06 0.36 87.58 8.8 0.12 8.33 2.53 119.25 0.09 88.15 0.32 77.86 s11 s21 s12 s22 s11 s22 25 0 +10j +25j +50j +100j +250j -10j -25j -50j -100j -250j 10 7.7g h z 7.7g h z 8.1g h z 8.1g h z 8.5g h z 8.5g h z s-parameter 3 6 s12 s21 0.3 6 180 0 -90 +90 scale for |s 21 | 7.7ghz 2 7.7ghz 8.1ghz 8.1ghz 8.5ghz 8.5ghz scale for |s12| 5
FLM7785-45F c-band internally matched fet package out line case style : ik pin assigment 1 : gate 2 : source 3 : drain 4 : source unit : mm 4
c-band internally matched fet FLM7785-45F 5 for further information please contact : eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 caution eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not put these products into the mouth. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. eudyna devices asia pte. ltd. hong kong branch rm.1101,ocean centre, 5 canton road tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. 1000 kamisukiahara, showa-cho nakakomagun, yamanashi 409-3883, japan (kokubo industrial park) tel +81-55-275-4411 fax +81-55-275-9461 sales division 1, kanai-cho, sakae-ku yokohama,244-0845,japan tel +81-45-853-8156 fax +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice.the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
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